smd type ic www.kexin.com.cn 1 smd type mosfet dual n-channel 2.5-v (g-s) mosfet common drain, esd protection KI6968BEDQ (si6968bedq) tssop-8 unit: mm absolute maximum ratings ta = 25 symbol 10 secs steady state unit v ds v gs t a =25 6.5 5.2 t a =70 5.5 3.5 i dm i s 1.5 1.0 maximum power dissipation t a =25 1.5 1.0 t a =70 0.96 0.64 t j ,t stg symbol typ max unit maximum junction-to-ambient* t 10 sec 72 83 steady-state 100 120 maximum junction-to-foot (drain) steady-state r thjf 55 70 * surface mounted on fr4 board, t 10 sec. drain-source voltage gate-source voltage operating junction and storage temperature range pulsed drain current continuous source current * continuous drain current* v -55to150 parameter w 20 12 30 parameter r thja /w a p d i d * typical value by design n-channel n-channel features v ds =20v,r ds(on) =0.022 @v gs =4.5v,i d =6.5a v ds =20v,r ds(on) =0.030 @v gs =2.5v,i d =5.5a
www.kexin.com.cn 2 smd type ic smd type mosfet electrical characteristics ta = 25 parameter symbol testconditons min typ max unit gate threshold voltage v gs(th) v ds =v gs ,i d = 250 a 0.6 1.6 v gate-body leakage i gss v ds =0v,v gs = 4.5 v 200 na v ds =16v,v gs =0v 1 a v ds =16v,v gs =0v,t j =70 25 a on-state drain current* i d(on) v ds 5v,v gs =4.5v 30 a v gs =4.5v,i d = 6.5 a 0.0165 0.022 v gs =2.5v,i d = 5.5 a 0.023 0.030 forward transconductance* g fs v ds =10v,i d =6.5a 30 s total gate charge q g 12 18 nc gate-source charge q gs v ds =10v,v gs =4.5v,i d = 6.5a 2.2 nc gate-drain charge q gd 3.6 nc turn-on delay time t d(on) 245 365 ns rise time t r v dd =10v,r l =10 330 495 ns turn-off delay time t d(off) i d =1a,v gen =4.5v,r g =6 860 1300 ns fall time t f 510 765 ns schottky diode forward voltage* v sd i s =1.5a,v gs = 0 v 0.71 1.2 v * pulse test; pulse width 300 s, duty cycle 2%. zero gate voltage drain current i dss drain-source on-state resistance r ds(on) KI6968BEDQ (si6968bedq)
|
